aptgf300du120g aptgf300du120g ? rev 3 november, 2007 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 400 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1780 w rbsoa reverse bias safe operating area t j = 150c 600a @ 1200v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com q2 e q1 c1 c2 e2 g2 e1 g1 c2 c1 e e1 g1 g2 e2 v ces = 1200v i c = 300a @ tc = 80c application ? ac switches ? switched mode power supplies ? uninterruptible power supplies features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant dual common source n pt igbt power module
aptgf300du120g aptgf300du120g ? rev 3 november, 2007 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 500 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 750 a t j = 25c 3.3 3.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 300a t j = 125c 4 v v ge(th) gate threshold voltage v ge = v ce , i c = 12ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 1 a dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 21 c oes output capacitance 2.9 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.52 nf t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 310 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 300a r g = 3 30 ns t d(on) turn-on delay time 130 t r rise time 60 t d(off) turn-off delay time 360 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 300a r g = 3 40 ns e on turn-on switching energy t j = 125c 25 e off turn-off switching energy v ge = 15v v bus = 600v i c = 300a r g = 3 t j = 125c 15 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 300 a t j = 25c 2.1 v f diode forward voltage i f = 300a t j = 125c 1.9 v t j = 25c 120 t rr reverse recovery time t j = 125c 210 ns t j = 25c 22 q rr reverse recovery charge t j = 125c 43 c t j = 25c 7 er reverse recovery energy i f = 300a v r = 600v di/dt =4500a/s t j = 125c 15 mj
aptgf300du120g aptgf300du120g ? rev 3 november, 2007 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.07 r thjc junction to case thermal resistance diode 0.12 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructi ons for sp6 power modules on www.microsemi.com
aptgf300du120g aptgf300du120g ? rev 3 november, 2007 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 100 200 300 400 500 600 0123456 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 100 200 300 400 500 600 0123456 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 100 200 300 400 500 600 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff eoff er 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3 ? t j = 125c eon eoff er 0 20 40 60 80 100 0 2 4 6 8 101214161820 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
aptgf300du120g aptgf300du120g ? rev 3 november, 2007 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c 0 100 200 300 400 500 600 00.511.522.53 v f (v) if (a) hard switching zcs zvs 0 20 40 60 80 100 0 50 100 150 200 250 300 350 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s pate nts 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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